1402TR MOSFET. Datasheet pdf. Equivalent
Type Designator: 1402TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 310 W
Maximum Drain-Source Voltage |Vds|: 40 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 210 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 38 nS
Drain-Source Capacitance (Cd): 1300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0032 Ohm
Package: TO220
1402TR Transistor Equivalent Substitute - MOSFET Cross-Reference Search
1402TR Datasheet (PDF)
1.1. 1402tr.pdf 
Size:2223K _goford
GOFORD 1402TR N-Channel MOSFETS DESCRIPTION VDSS RDS(ON) ID The OGFD 1402TR uses advanced trench technology and design to provide excellent R DS(ON) 40V < 3.2mΩ 210A with low gate charge. It can be used in a wide variety of applications. Features: • High density cell design for ultra low Rdson. • Fully characterized avalanche voltage and current. • Good stability and unifor
Datasheet: CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .
