1404TR Datasheet and Replacement
Type Designator: 1404TR
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 220 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 190 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 916 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO220
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1404TR Datasheet (PDF)
1404tr.pdf

GOFORD1404TRN-Channel MOSFETSDESCRIPTIONThe OGFD 1404TR uses advanced trenchVDSS RDS(ON) IDtechnology and design to provide excellent RDS(ON)40V 4m 190Awith low gate charge. It can be used in a widevariety of applications.Features: High density cell design for ultra low Rdson. Fully characterized avalanche voltage and current. Good stability and uniformity
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
History: IRF1104L | SVGP20110NSTR | IRF7495PBF | MXP4004AT | RYC002N05 | HMS11N65 | MEE42942-G
Keywords - 1404TR MOSFET datasheet
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History: IRF1104L | SVGP20110NSTR | IRF7495PBF | MXP4004AT | RYC002N05 | HMS11N65 | MEE42942-G



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