1404TR Datasheet. Specs and Replacement

Type Designator: 1404TR  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 220 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 190 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 916 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm

Package: TO220

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1404TR datasheet

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1404TR

GOFORD 1404TR N-Channel MOSFETS DESCRIPTION The OGFD 1404TR uses advanced trench VDSS RDS(ON) ID technology and design to provide excellent R DS(ON) 40V 4m 190A with low gate charge. It can be used in a wide variety of applications. Features High density cell design for ultra low Rdson. Fully characterized avalanche voltage and current. Good stability and uniformity... See More ⇒

Detailed specifications: 05N06, 100N03, 100P03, 10N03, 110N10, 11N10C, 120N03, 1402TR, IRF9540N, 140N10, ECYA, G1002, G1002L, G1003A, G1006, G1006A, G1008

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