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1404TR Spec and Replacement


   Type Designator: 1404TR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 220 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 190 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 163 nC
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 916 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
   Package: TO220

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1404TR Specs

 ..1. Size:1190K  goford
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1404TR

GOFORD 1404TR N-Channel MOSFETS DESCRIPTION The OGFD 1404TR uses advanced trench VDSS RDS(ON) ID technology and design to provide excellent R DS(ON) 40V 4m 190A with low gate charge. It can be used in a wide variety of applications. Features High density cell design for ultra low Rdson. Fully characterized avalanche voltage and current. Good stability and uniformity... See More ⇒

Detailed specifications: 05N06 , 100N03 , 100P03 , 10N03 , 110N10 , 11N10C , 120N03 , 1402TR , 2N7002 , 140N10 , ECYA , G1002 , G1002L , G1003A , G1006 , G1006A , G1008 .

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