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ECYA Specs and Replacement

Type Designator: ECYA

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 75 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: SOT23

ECYA substitution

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ECYA datasheet

 ..1. Size:827K  goford
 ecya.pdf pdf_icon

ECYA

GOFORD ECYA DESCRIPTION D The ECYAuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) ECYA -20V 64m 89 m -3 A High Po... See More ⇒

Detailed specifications: 100P03 , 10N03 , 110N10 , 11N10C , 120N03 , 1402TR , 1404TR , 140N10 , IRF4905 , G1002 , G1002L , G1003A , G1006 , G1006A , G1008 , G2002 , G2003 .

History: IRFP3306 | IRFP3703

Keywords - ECYA MOSFET specs

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