All MOSFET. ECYA Datasheet

 

ECYA Datasheet and Replacement


   Type Designator: ECYA
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT23
 

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ECYA Datasheet (PDF)

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ECYA

GOFORDECYADESCRIPTION DThe ECYAuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)ECYA-20V64m 89 m -3A High Po

Datasheet: 100P03 , 10N03 , 110N10 , 11N10C , 120N03 , 1402TR , 1404TR , 140N10 , IRF4905 , G1002 , G1002L , G1003A , G1006 , G1006A , G1008 , G2002 , G2003 .

History: FDMS2510SDC | MNT-LB32N20 | IRF7469 | AO4803-MS | IXTH5N100A | MEM2302X | WPM2015-MS

Keywords - ECYA MOSFET datasheet

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