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G1003A Specs and Replacement

Type Designator: G1003A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm

Package: SOT23-3L

G1003A substitution

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G1003A datasheet

 ..1. Size:2145K  goford
 g1003a.pdf pdf_icon

G1003A

GOFORD G1003A Description The G1003A uses advanced trench technology and D design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. It is ESD protected. It is ESD protected. It is ESD protected. G General Features VDSS RDS(ON) ID S @ 10V (typ) Schematic diagram 5A m 100V 135 High density cell design fo... See More ⇒

 9.1. Size:658K  gfd
 g1003.pdf pdf_icon

G1003A

G1003 Description The G1003 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be D used in a wide variety of applications. G General Features V = 100V,I = 5A DS D m RDS(ON) ... See More ⇒

Detailed specifications: 11N10C , 120N03 , 1402TR , 1404TR , 140N10 , ECYA , G1002 , G1002L , K3569 , G1006 , G1006A , G1008 , G2002 , G2003 , G2005 , G2005K , G2009 .

Keywords - G1003A MOSFET specs

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