G2002 PDF and Equivalents Search

 

G2002 Specs and Replacement

Type Designator: G2002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO92

G2002 substitution

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G2002 datasheet

 ..1. Size:1933K  goford
 g2002.pdf pdf_icon

G2002

GOFORD G2002 D Description The G2002 uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 520m 200V 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curr... See More ⇒

 0.1. Size:1473K  gfd
 g2002l.pdf pdf_icon

G2002

G2002L Description uses advanced trench technology and The G2002L D design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. G General Features S VDS = 200V,ID =2A Schematic diagram R ... See More ⇒

Detailed specifications: 140N10 , ECYA , G1002 , G1002L , G1003A , G1006 , G1006A , G1008 , SKD502T , G2003 , G2005 , G2005K , G2009 , G2009K , G20N20 , G2304 , G2305 .

History: IRLR7821C | APQ39SN04AB | CS2N60 | WMP10N105C2

Keywords - G2002 MOSFET specs

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