G2005 PDF and Equivalents Search

 

G2005 Specs and Replacement

Type Designator: G2005

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO251

G2005 substitution

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G2005 datasheet

 ..1. Size:1700K  goford
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G2005

GOFORD G2005 Description The G2005 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 520m 200V 5A G2005 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren... See More ⇒

 0.1. Size:1496K  goford
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G2005

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Detailed specifications: G1002 , G1002L , G1003A , G1006 , G1006A , G1008 , G2002 , G2003 , 13N50 , G2005K , G2009 , G2009K , G20N20 , G2304 , G2305 , G2502 , G2503 .

History: VN10LP | FDMA3027PZ

Keywords - G2005 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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