All MOSFET. G2005 Datasheet

 

G2005 Datasheet and Replacement


   Type Designator: G2005
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO251
 
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G2005 Datasheet (PDF)

 ..1. Size:1700K  goford
 g2005.pdf pdf_icon

G2005

GOFORDG2005Description The G2005 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @10V (typ)520m 200V 5AG2005 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

 0.1. Size:1496K  goford
 g2005k.pdf pdf_icon

G2005

GOFORDG2005KDescription The G2005K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @10V (typ)520m 200V 5A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

Datasheet: G1002 , G1002L , G1003A , G1006 , G1006A , G1008 , G2002 , G2003 , TK10A60D , G2005K , G2009 , G2009K , G20N20 , G2304 , G2305 , G2502 , G2503 .

History: CEF05N65 | SFB1800N650C2 | JMPL0648AK | FDMS7606

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