G2005 Datasheet and Replacement
Type Designator: G2005
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO251
G2005 substitution
G2005 Datasheet (PDF)
g2005.pdf

GOFORDG2005Description The G2005 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @10V (typ)520m 200V 5AG2005 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren
g2005k.pdf

GOFORDG2005KDescription The G2005K uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @10V (typ)520m 200V 5A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current
Datasheet: G1002 , G1002L , G1003A , G1006 , G1006A , G1008 , G2002 , G2003 , TK10A60D , G2005K , G2009 , G2009K , G20N20 , G2304 , G2305 , G2502 , G2503 .
History: SSH40N15A
Keywords - G2005 MOSFET datasheet
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History: SSH40N15A



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