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G2005K Spec and Replacement


   Type Designator: G2005K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
   Package: TO252

 G2005K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G2005K Specs

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G2005K

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G2005K

GOFORD G2005 Description The G2005 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 520m 200V 5A G2005 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren... See More ⇒

Detailed specifications: G1002L , G1003A , G1006 , G1006A , G1008 , G2002 , G2003 , G2005 , AON7410 , G2009 , G2009K , G20N20 , G2304 , G2305 , G2502 , G2503 , G100N03 .

History: DHS035N10E

Keywords - G2005K MOSFET specs

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