G2005K Spec and Replacement
Type Designator: G2005K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm
Package: TO252
G2005K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
G2005K Specs
g2005.pdf
GOFORD G2005 Description The G2005 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 520m 200V 5A G2005 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren... See More ⇒
Detailed specifications: G1002L , G1003A , G1006 , G1006A , G1008 , G2002 , G2003 , G2005 , AON7410 , G2009 , G2009K , G20N20 , G2304 , G2305 , G2502 , G2503 , G100N03 .
History: DHS035N10E
Keywords - G2005K MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: DHS035N10E
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