G2005K Datasheet. Specs and Replacement

Type Designator: G2005K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.58 Ohm

Package: TO252

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G2005K datasheet

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G2005K

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G2005K

GOFORD G2005 Description The G2005 uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 520m 200V 5A G2005 High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren... See More ⇒

Detailed specifications: G1002L, G1003A, G1006, G1006A, G1008, G2002, G2003, G2005, AON6380, G2009, G2009K, G20N20, G2304, G2305, G2502, G2503, G100N03

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