G20N20 PDF and Equivalents Search

 

G20N20 Specs and Replacement

Type Designator: G20N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 163 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO252

G20N20 substitution

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G20N20 datasheet

 ..1. Size:1639K  goford
 g20n20.pdf pdf_icon

G20N20

GOFORD G20N20 Description The G20N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ 10V (Typ) 200V 62 m 20 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current... See More ⇒

 9.1. Size:244K  ixys
 mmix4g20n250.pdf pdf_icon

G20N20

Advance Technical Information High Voltage IGBT VCES = 2500V MMIX4G20N250 For Capacitor Discharge IC25 = 23A Applications VCE(sat) 3.1V C1 C2 Q1 Q2 ( Electrically Isolated Tab) G2 G1 E2C4 E1C3 Q3 Q4 C2 H-Bridge Configuration G2 G4 E2C4 G3 E3E4 G4 E3E4 C1 G1 E1C3 Symbol Test Conditions Maximum Ratings G3 VCES TJ = 25 C to 150 C 2500 V VCGR T... See More ⇒

Detailed specifications: G1006A, G1008, G2002, G2003, G2005, G2005K, G2009, G2009K, IRF1010E, G2304, G2305, G2502, G2503, G100N03, G100N04, G10N10, G110N06

Keywords - G20N20 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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