All MOSFET. G20N20 Datasheet

 

G20N20 Datasheet and Replacement


   Type Designator: G20N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 163 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO252
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G20N20 Datasheet (PDF)

 ..1. Size:1639K  goford
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G20N20

GOFORD G20N20 Description The G20N20 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @10V (Typ)200V 62 m 20 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

 9.1. Size:244K  ixys
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G20N20

Advance Technical InformationHigh Voltage IGBT VCES = 2500VMMIX4G20N250For Capacitor DischargeIC25 = 23AApplicationsVCE(sat) 3.1VC1 C2Q1 Q2( Electrically Isolated Tab)G2G1E2C4E1C3Q3 Q4 C2H-Bridge ConfigurationG2G4E2C4G3E3E4G4E3E4C1G1E1C3Symbol Test Conditions Maximum RatingsG3VCES TJ = 25C to 150C 2500 VVCGR T

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History: CHM85A3PAGP | ALD1103DB | SML100L16 | SQ9407EY-T1 | ZXM66P03N8 | TK7P65W

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