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G2304 Specs and Replacement

Type Designator: G2304

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 40 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm

Package: SOT23

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G2304 datasheet

 ..1. Size:1575K  goford
 g2304.pdf pdf_icon

G2304

GOFORD G2304 D Description The 2304 uses advanced trench technology to provide G excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features S Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 3.6 30V 61 47 A G2304 High power and current handing capability Lead f... See More ⇒

Detailed specifications: G1008, G2002, G2003, G2005, G2005K, G2009, G2009K, G20N20, IRFB3607, G2305, G2502, G2503, G100N03, G100N04, G10N10, G110N06, G120N04

Keywords - G2304 MOSFET specs

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