All MOSFET. G2304 Datasheet

 

G2304 MOSFET. Datasheet pdf. Equivalent


   Type Designator: G2304
   Marking Code: G2304
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 4 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOT23

 G2304 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G2304 Datasheet (PDF)

 ..1. Size:1575K  goford
 g2304.pdf

G2304 G2304

GOFORDG2304DDescription The 2304 uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features S Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 3.630V 61 47 AG2304 High power and current handing capability Lead f

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: SRC65R085BS

 

 
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