All MOSFET. G2304 Datasheet

 

G2304 Datasheet and Replacement


   Type Designator: G2304
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 3.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
   Package: SOT23
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G2304 Datasheet (PDF)

 ..1. Size:1575K  goford
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G2304

GOFORDG2304DDescription The 2304 uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features S Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 3.630V 61 47 AG2304 High power and current handing capability Lead f

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History: SML100L16 | ALD1103DB | CHM85A3PAGP | SQ9407EY-T1 | TK7P65W | ZXM66P03N8

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