G2304 Datasheet and Replacement
Type Designator: G2304
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.058 Ohm
Package: SOT23
G2304 substitution
G2304 Datasheet (PDF)
g2304.pdf

GOFORDG2304DDescription The 2304 uses advanced trench technology to provide Gexcellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. General Features S Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 3.630V 61 47 AG2304 High power and current handing capability Lead f
Datasheet: G1008 , G2002 , G2003 , G2005 , G2005K , G2009 , G2009K , G20N20 , AON7506 , G2305 , G2502 , G2503 , G100N03 , G100N04 , G10N10 , G110N06 , G120N04 .
History: APT33N90JCCU2 | CS3N80FA9 | PHD36N03LT | APT41M80B2 | CS3N90A3H | SD5401CY | VN10KCSM4
Keywords - G2304 MOSFET datasheet
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History: APT33N90JCCU2 | CS3N80FA9 | PHD36N03LT | APT41M80B2 | CS3N90A3H | SD5401CY | VN10KCSM4



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