G2502 Datasheet and Replacement
Type Designator: G2502
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO92
G2502 substitution
G2502 Datasheet (PDF)
g2502.pdf

GOFORDG2502DDescription The G2502 uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ) 250V 1 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current
Datasheet: G2003 , G2005 , G2005K , G2009 , G2009K , G20N20 , G2304 , G2305 , AO4407 , G2503 , G100N03 , G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , G15P04 .
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