All MOSFET. G2502 Datasheet

 

G2502 Datasheet and Replacement


   Type Designator: G2502
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO92
 

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G2502 Datasheet (PDF)

 ..1. Size:1771K  goford
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G2502

GOFORDG2502DDescription The G2502 uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features SSchematic diagram VDSS RDS(ON) ID @10V (typ) 250V 1 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

Datasheet: G2003 , G2005 , G2005K , G2009 , G2009K , G20N20 , G2304 , G2305 , AO4407 , G2503 , G100N03 , G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , G15P04 .

History: FCAB2126 | CS10N65FF | IPAN60R650CE

Keywords - G2502 MOSFET datasheet

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