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G2502 Spec and Replacement


   Type Designator: G2502
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO92

 G2502 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

G2502 Specs

 ..1. Size:1771K  goford
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G2502

GOFORD G2502 D Description The G2502 uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features S Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 250V 1 2A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current ... See More ⇒

Detailed specifications: G2003 , G2005 , G2005K , G2009 , G2009K , G20N20 , G2304 , G2305 , IRF530 , G2503 , G100N03 , G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , G15P04 .

History: DSU024N10N3A | AP50SL290DH | DSU023N10N3

Keywords - G2502 MOSFET specs

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