G2503 Datasheet and Replacement
Type Designator: G2503
Marking Code: G2503
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO92
G2503 substitution
G2503 Datasheet (PDF)
g2503.pdf

GOFORDG2503DDescription The G2503 uses advanced trench technology and Gdesign to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. SGeneral Features Schematic diagram VDSS RDS(ON) ID @10V (typ) 250V 1 3A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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