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G2503 Specs and Replacement

Type Designator: G2503

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO92

G2503 substitution

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G2503 datasheet

 ..1. Size:1741K  goford
 g2503.pdf pdf_icon

G2503

GOFORD G2503 D Description The G2503 uses advanced trench technology and G design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. S General Features Schematic diagram VDSS RDS(ON) ID @ 10V (typ) 250V 1 3A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current ... See More ⇒

Detailed specifications: G2005, G2005K, G2009, G2009K, G20N20, G2304, G2305, G2502, CS150N03A8, G100N03, G100N04, G10N10, G110N06, G120N04, G120N04A, G15P04, G1815

Keywords - G2503 MOSFET specs

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