G100N03 Datasheet and Replacement

GOFORD G100N03 Description The G100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @10V (Typ)30V 4m 100A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

JMTG100N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 30A Load SwitchRDS(ON)

Silicon N-Channel Power MOSFETDescriptionThe MPG100N03 uses advanced technology and design toprovide excellent R . It can be used in a wide variety ofDS(ON)applications.General FeaturesV =30V, I =100ADS DLow ON ResistanceLow Reverse transfer capacitancesSchematic diagram100% Single Pulse avalanche energy TestApplicationPower switching applicationA

GOFORDG100N04Description The G100N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 10040V 7 5.2 A High density cell design for ultra low Rdson Fully characterized ava

60V, 55A, 8.9m N-channel Power Trench MOSFETJMTG100N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 55 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.7 mWRDS(ON)_Typ(@VGS=4.5V 8.9 mWApplications Load Switch

JMTG100N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 40A Load SwitchRDS(ON)

60V, 33A, 11.7m Dual N-channel Power Trench MOSFETJMTG100N06DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 33 ARDS(ON)_Typ(@VGS=10V 10.4 mWRDS(ON)_Typ(@VGS=4.5V 11.7 mWApplications Load Switch PWM Applicatio

Green ProductMPG100N0660VN-Channel Power MOSFETDESCRIPTION KEYCHARACTERISTICS V =60V,I =100ADS DThe MPG100N06 uses advanced trench technology to provide R

DESCRIPTIONThe MPG100N07P uses advanced trenchtechnology to provide excellent R , low gateDS(ON)charge. It can be used in a wide variety ofapplications.KEY CHARACTERISTICSSchematic diagram V = 70V,I = 100ADS D R

Silicon N-Channel Power MOSFETDescriptionThe MPG100N06 uses advanced trench technologyto provide excellent R , low gate charge. It can beDS(ON)used in a wide variety of applications.KEY CHARACTERISTICS V =60V,I =100A R

80V N-Channel Power MOSFETDESCRIPTIONThe MPG100N08 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.Feature Description V = 80V,I = 100A.DS DR = 5.8m (typ.) @ V = 10V.DS(ON) GSR = 8.6m (Max.) @ V = 10V.DS(ON) GS Schematic diagram Uses CRM(CQ) advanced Trench technology. Extreme