All MOSFET. G100N03 Datasheet

 

G100N03 Datasheet and Replacement


   Type Designator: G100N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 160 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252
 

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G100N03 Datasheet (PDF)

 ..1. Size:1492K  goford
 g100n03.pdf pdf_icon

G100N03

GOFORD G100N03 Description The G100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @10V (Typ)30V 4m 100A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

 8.1. Size:1134K  goford
 g100n04.pdf pdf_icon

G100N03

GOFORDG100N04Description The G100N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 10040V 7 5.2 A High density cell design for ultra low Rdson Fully characterized ava

 8.2. Size:955K  oriental semi
 sfg100n08kf.pdf pdf_icon

G100N03

 8.3. Size:844K  oriental semi
 sfg100n08gf.pdf pdf_icon

G100N03

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Datasheet: G2005K , G2009 , G2009K , G20N20 , G2304 , G2305 , G2502 , G2503 , IRFP450 , G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , G15P04 , G1815 , G1816 .

History: 2N50

Keywords - G100N03 MOSFET datasheet

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