G15P04 PDF and Equivalents Search

 

G15P04 Specs and Replacement

Type Designator: G15P04

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 92 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO252

G15P04 substitution

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G15P04 datasheet

 ..1. Size:902K  goford
 g15p04 to252.pdf pdf_icon

G15P04

GOFORD G15P04 General Description The G15P04 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as -4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDSS RDS(ON) RDS(ON) ID (Typ) @-10V (Typ) @-4.5V -40V 50m 28 m -15 A Marking and pin Assignm... See More ⇒

Detailed specifications: G2502 , G2503 , G100N03 , G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , BS170 , G1815 , G1816 , G1825 , 15P03 , 16N10 , 18N10 , 2002A , 20P10 .

History: IRF630S

Keywords - G15P04 MOSFET specs

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