All MOSFET. G15P04 Datasheet

 

G15P04 Datasheet and Replacement


   Type Designator: G15P04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 92 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO252
 

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G15P04 Datasheet (PDF)

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G15P04

GOFORD G15P04General Description The G15P04 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON)voltages as low as -4.5V. This device is suitable for use as a wide variety of applications. Schematic Diagram Features VDSS RDS(ON) RDS(ON) ID(Typ) @-10V (Typ) @-4.5V -40V50m 28 m -15AMarking and pin Assignm

Datasheet: G2502 , G2503 , G100N03 , G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , 18N50 , G1815 , G1816 , G1825 , 15P03 , 16N10 , 18N10 , 2002A , 20P10 .

History: CEB6086 | AP60WN2K3H

Keywords - G15P04 MOSFET datasheet

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