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G1816 Specs and Replacement

Type Designator: G1816

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: SOT23

G1816 substitution

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G1816 datasheet

 ..1. Size:1778K  goford
 g1816.pdf pdf_icon

G1816

GOFORD G1816 DESCRIPTION D The G1816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) G1816 -18V 37m 51m -4.8 A H... See More ⇒

Detailed specifications: G100N03 , G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , G15P04 , G1815 , IRFP250 , G1825 , 15P03 , 16N10 , 18N10 , 2002A , 20P10 , 21N06 , 22N10 .

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