All MOSFET. G1816 Datasheet

 

G1816 Datasheet and Replacement


   Type Designator: G1816
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
   Package: SOT23
 

 G1816 substitution

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G1816 Datasheet (PDF)

 ..1. Size:1778K  goford
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G1816

GOFORDG1816DESCRIPTION DThe G1816 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SGENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ)G1816-18V37m 51m -4.8 A H

Datasheet: G100N03 , G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , G15P04 , G1815 , STF13NM60N , G1825 , 15P03 , 16N10 , 18N10 , 2002A , 20P10 , 21N06 , 22N10 .

History: MPSH65M260 | HM180N02 | SWN5N70K | PMDPB56XNEA | 2SK735 | P1503HK | SL19N120A

Keywords - G1816 MOSFET datasheet

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