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G1825 Specs and Replacement

Type Designator: G1825

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 18 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: SOT23

G1825 substitution

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G1825 datasheet

 ..1. Size:1474K  goford
 g1825.pdf pdf_icon

G1825

GOFORD G1825 Description D The G1825 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. S General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ) 18V 15m 22m 5.5 A ... See More ⇒

 0.1. Size:96K  renesas
 rej03g1825 rjk0392dpads.pdf pdf_icon

G1825

Preliminary Datasheet RJK0392DPA REJ03G1825-0230 Silicon N Channel Power MOS FET Rev.2.30 Power Switching Jun 17, 2010 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code PWSN0008DC-... See More ⇒

Detailed specifications: G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , G15P04 , G1815 , G1816 , IRF1407 , 15P03 , 16N10 , 18N10 , 2002A , 20P10 , 21N06 , 22N10 , 2301H .

Keywords - G1825 MOSFET specs

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