All MOSFET. G1825 Datasheet

 

G1825 Datasheet and Replacement


   Type Designator: G1825
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: SOT23
 

 G1825 substitution

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G1825 Datasheet (PDF)

 ..1. Size:1474K  goford
 g1825.pdf pdf_icon

G1825

GOFORDG1825Description DThe G1825 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SGeneral Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ)18V15m 22m 5.5A

 0.1. Size:96K  renesas
 rej03g1825 rjk0392dpads.pdf pdf_icon

G1825

Preliminary Datasheet RJK0392DPA REJ03G1825-0230Silicon N Channel Power MOS FET Rev.2.30Power Switching Jun 17, 2010Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 2.7 m typ. (at VGS = 10 V) Pb-free Halogen-free Outline RENESAS Package code: PWSN0008DC-

Datasheet: G100N04 , G10N10 , G110N06 , G120N04 , G120N04A , G15P04 , G1815 , G1816 , P0903BDG , 15P03 , 16N10 , 18N10 , 2002A , 20P10 , 21N06 , 22N10 , 2301H .

History: HM2N60 | BLP04N10-B | RQA0008NXAQS | AM2394NE | SSM4424GM | S-LNTK2575LT1G | SM3116NSU

Keywords - G1825 MOSFET datasheet

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