All MOSFET. 2301H Datasheet

 

2301H Datasheet and Replacement


   Type Designator: 2301H
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 75 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: SOT23
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2301H Datasheet (PDF)

 ..1. Size:2066K  goford
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2301H

GOFORD 2301HDESCRIPTION D2The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G2voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S2GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-4.5V -10V (Typ)m m -2-30V 105 65 A2301H

 0.1. Size:592K  jestek
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2301H

JST2301H-20V,-3AP-Channel MosfetFEATURESSOT-23RDS(ON) 110m @VGS=-4.5VRDS(ON) 140m @VGS=-2.5VAPPLICATIONSLoad Switch for Portable DevicesDC/DC ConverterMARKING P-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS -20VGate-Source Voltage V 12GSI -3DContinuous Drain CurrentAPulse

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK1982-01MR | GSM4210 | AP3908GD | NCE65NF050T | 2N3386 | IXFN320N17T2 | 2SK2862

Keywords - 2301H MOSFET datasheet

 2301H cross reference
 2301H equivalent finder
 2301H lookup
 2301H substitution
 2301H replacement

 

 
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