2301H MOSFET. Datasheet pdf. Equivalent
Type Designator: 2301H
Marking Code: 2301H
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 12 nC
trⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 75 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: SOT23
2301H Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2301H Datasheet (PDF)
2301h.pdf
GOFORD 2301HDESCRIPTION D2The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G2voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S2GENERAL FEATURES Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @-4.5V -10V (Typ)m m -2-30V 105 65 A2301H
jst2301h.pdf
JST2301H-20V,-3AP-Channel MosfetFEATURESSOT-23RDS(ON) 110m @VGS=-4.5VRDS(ON) 140m @VGS=-2.5VAPPLICATIONSLoad Switch for Portable DevicesDC/DC ConverterMARKING P-CHANNEL MOSFETMaximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS -20VGate-Source Voltage V 12GSI -3DContinuous Drain CurrentAPulse
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: AP20N15AGH | IRLU3303
History: AP20N15AGH | IRLU3303
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