All MOSFET. 2301H Datasheet


2301H MOSFET. Datasheet pdf. Equivalent

Type Designator: 2301H

Marking Code: 2301H

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 0.9 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 12 V

Maximum Drain Current |Id|: 2 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 75 pF

Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm

Package: SOT23

2301H Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2301H Datasheet (PDF)

1.1. 2301h.pdf Size:2066K _goford


GOFORD 2301H DESCRIPTION D2 The 2301H uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G2 voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S2 GENERAL FEATURES ● Schematic diagram VDSS RDS(ON) RDS(ON) ID @ (Typ) @ -4.5V -10V (Typ) mΩ mΩ -2 -30V 105 65 A 2301H

Datasheet: CEM2401 , CEM2407 , CEM3053 , CEM3083 , CEM3301 , CEM3307 , CEM3317 , CEM3405L , BUZ10 , CEM4201 , CEM4207 , CEM4301 , CEM4311 , CEM4435A , CEM4948 , CEM4953 , CEM4953A .


Back to Top