28P55 Specs and Replacement
Type Designator: 28P55
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO252
28P55 substitution
- MOSFET ⓘ Cross-Reference Search
28P55 datasheet
28p55.pdf
GOFORD 28P55 Description The 28P55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @ (typ) -10V Schematic diagram -55V m -30A 30 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current ... See More ⇒
Detailed specifications: 21N06 , 22N10 , 2301H , 2301L , 25P06 , 25P10 , 25P10G , 28N10 , 8N60 , 30P10A , 30P55 , 3205PL , 3205TR , 3400L , 3401A , 3401L , 40N10K .
Keywords - 28P55 MOSFET specs
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28P55 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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