All MOSFET. 28P55 Datasheet

 

28P55 MOSFET. Datasheet pdf. Equivalent

Type Designator: 28P55

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 55 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 30 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 240 pF

Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm

Package: TO252

28P55 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

28P55 Datasheet (PDF)

1.1. 28p55.pdf Size:1700K _goford

28P55
28P55

GOFORD 28P55 Description The 28P55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) ID @ (typ) -10V Schematic diagram -55V m -30A 30 Ω ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current

Datasheet: 21N06 , 22N10 , 2301H , 2301L , 25P06 , 25P10 , 25P10G , 28N10 , 2SK2611 , 30P10A , 30P55 , 3205PL , 3205TR , 3400L , 3401A , 3401L , 40N10K .

 
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