28P55 MOSFET. Datasheet pdf. Equivalent
Type Designator: 28P55
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 240 pF
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO252
28P55 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
28P55 Datasheet (PDF)
1.1. 28p55.pdf 
Size:1700K _goford
GOFORD 28P55 Description The 28P55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) ID @ (typ) -10V Schematic diagram -55V m -30A 30 Ω ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current
Datasheet: 2P7145B-IM , 2P7145B-5-IM , 2P7172A , 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , IRF1010E , SI2300 , SI2302 , SI2312 , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 .
