28P55 MOSFET. Datasheet pdf. Equivalent
Type Designator: 28P55
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 55 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Drain Current |Id|: 30 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 240 pF
Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
Package: TO252
28P55 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
28P55 Datasheet (PDF)
1.1. 28p55.pdf 
Size:1700K _goford
GOFORD 28P55 Description The 28P55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDSS RDS(ON) ID @ (typ) -10V Schematic diagram -55V m -30A 30 Ω ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current
Datasheet: 21N06 , 22N10 , 2301H , 2301L , 25P06 , 25P10 , 25P10G , 28N10 , 2SK2611 , 30P10A , 30P55 , 3205PL , 3205TR , 3400L , 3401A , 3401L , 40N10K .
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MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |