28P55 Datasheet. Specs and Replacement

Type Designator: 28P55  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 90 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO252

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28P55 datasheet

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28P55

GOFORD 28P55 Description The 28P55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @ (typ) -10V Schematic diagram -55V m -30A 30 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current ... See More ⇒

Detailed specifications: 21N06, 22N10, 2301H, 2301L, 25P06, 25P10, 25P10G, 28N10, SKD502T, 30P10A, 30P55, 3205PL, 3205TR, 3400L, 3401A, 3401L, 40N10K

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