All MOSFET. 28P55 Datasheet

 

28P55 Datasheet and Replacement


   Type Designator: 28P55
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO252
 

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28P55 Datasheet (PDF)

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28P55

GOFORD28P55Description The 28P55 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID @ (typ)-10V Schematic diagram -55V m -30A 30 High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

Datasheet: 21N06 , 22N10 , 2301H , 2301L , 25P06 , 25P10 , 25P10G , 28N10 , IRFB31N20D , 30P10A , 30P55 , 3205PL , 3205TR , 3400L , 3401A , 3401L , 40N10K .

History: FDD5670 | MTB110P10F3

Keywords - 28P55 MOSFET datasheet

 28P55 cross reference
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