45P40 Datasheet and Replacement
Type Designator: 45P40
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 551 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO252
45P40 substitution
45P40 Datasheet (PDF)
45p40.pdf

GOFORD45P04Description The 45P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ)-10V m -50A-40V 9 High density cell design for ultra low Rdson Fully characterized avalanche voltage and c
Datasheet: 30P55 , 3205PL , 3205TR , 3400L , 3401A , 3401L , 40N10K , 40P04 , IRF1405 , 50N03 , 5P40 , 60N04 , 6706A , 68P40 , 80N03 , 80N04 , 80N08TR .
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