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45P40 Specs and Replacement

Type Designator: 45P40

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 551 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO252

45P40 substitution

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45P40 datasheet

 ..1. Size:1495K  goford
 45p40.pdf pdf_icon

45P40

GOFORD 45P04 Description The 45P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features Schematic diagram VDSS RDS(ON) ID @ (typ) -10V m -50A -40V 9 High density cell design for ultra low Rdson Fully characterized avalanche voltage and c... See More ⇒

Detailed specifications: 30P55, 3205PL, 3205TR, 3400L, 3401A, 3401L, 40N10K, 40P04, IRF830, 50N03, 5P40, 60N04, 6706A, 68P40, 80N03, 80N04, 80N08TR

Keywords - 45P40 MOSFET specs

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