IRF520N Datasheet. Specs and Replacement

Type Designator: IRF520N  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 48 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 92 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO220AB

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IRF520N substitution

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IRF520N datasheet

 ..1. Size:116K  international rectifier
irf520n.pdf pdf_icon

IRF520N

PD - 91339A IRF520N HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef... See More ⇒

 ..2. Size:173K  international rectifier
irf520npbf.pdf pdf_icon

IRF520N

PD - 94818 IRF520NPbF HEXFET Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175 C Operating Temperature Fast Switching RDS(on) = 0.20 Fully Avalanche Rated G Lead-Free Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are... See More ⇒

 ..3. Size:1501K  cn vbsemi
irf520npbf.pdf pdf_icon

IRF520N

IRF520NPBF www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.092 at VGS = 10 V 100 18 COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters TO-220AB D G S G D S N-Channel MOSFET Top View ABSOLUTE M... See More ⇒

 ..4. Size:245K  inchange semiconductor
irf520n.pdf pdf_icon

IRF520N

isc N-Channel MOSFET Transistor IRF520N IIRF520N FEATURES Static drain-source on-resistance RDS(on) 0.2 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Efficient and reliable device for use in a wide variety of applications ABSOLUTE MAXIMUM RATINGS(T =2... See More ⇒

Detailed specifications: IRF510A, IRF510S, IRF511, IRF512, IRF513, IRF520, IRF520A, IRF520FI, AOD4184A, IRF520NS, IRF521, IRF5210, IRF5210L, IRF5210S, IRF522, IRF523, IRF530

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.