All MOSFET. IRF520N Datasheet

 

IRF520N MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF520N

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 48 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 10 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 9.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 16.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm

Package: TO220AB

IRF520N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF520N Datasheet (PDF)

0.1. irf520nl.pdf Size:170K _international_rectifier

IRF520N
IRF520N

PD -91340A IRF520NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175°C Operating Temperature RDS(on) = 0.20Ω Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

0.2. irf520npbf.pdf Size:173K _international_rectifier

IRF520N
IRF520N

PD - 94818 IRF520NPbF HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.20Ω Fully Avalanche Rated G Lead-Free Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are

 0.3. irf520n.pdf Size:116K _international_rectifier

IRF520N
IRF520N

PD - 91339A IRF520N HEXFET® Power MOSFET Advanced Process Technology D Dynamic dv/dt Rating VDSS = 100V 175°C Operating Temperature Fast Switching RDS(on) = 0.20Ω Fully Avalanche Rated G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benef

0.4. irf520nlpbf.pdf Size:408K _international_rectifier

IRF520N
IRF520N

PD- 95749 IRF520NSPbF IRF520NLPbF • Lead-Free www.irf.com 1 8/23/04 IRF520NS/LPbF 2 www.irf.com IRF520NS/LPbF www.irf.com 3 IRF520NS/LPbF 4 www.irf.com IRF520NS/LPbF www.irf.com 5 IRF520NS/LPbF 6 www.irf.com IRF520NS/LPbF www.irf.com 7 IRF520NS/LPbF D2Pak Package Outline Dimensions are shown in millimeters (inches) D2Pak Part Marking Information T HIS IS AN IRF 53

 0.5. irf520ns.pdf Size:185K _international_rectifier

IRF520N
IRF520N

PD -91340A IRF520NS/L HEXFET® Power MOSFET Advanced Process Technology D Surface Mount (IRF520NS) VDSS = 100V Low-profile through-hole (IRF520NL) 175°C Operating Temperature RDS(on) = 0.20Ω Fast Switching G Fully Avalanche Rated ID = 9.7A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low

0.6. irf520n.pdf Size:245K _inchange_semiconductor

IRF520N
IRF520N

isc N-Channel MOSFET Transistor IRF520N,IIRF520N ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.2Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Efficient and reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =2

0.7. irf520ns.pdf Size:258K _inchange_semiconductor

IRF520N
IRF520N

Isc N-Channel MOSFET Transistor IRF520NS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt

Datasheet: IRF510A , IRF510S , IRF511 , IRF512 , IRF513 , IRF520 , IRF520A , IRF520FI , APT50M38JFLL , IRF520NS , IRF521 , IRF5210 , IRF5210L , IRF5210S , IRF522 , IRF523 , IRF530 .

 

 
Back to Top