68P40 Datasheet and Replacement
Type Designator: 68P40
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 106 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 684 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO252
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68P40 Datasheet (PDF)
68p40.pdf

GOFORD68P40Description The 68P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDSS RDS(ON) IDSchematic diagram @10V (typ)m -70A-40V 7.568P40 High density cell design for ultra low Rdson OGFD Fully characterized avalanche
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: 5N60G-K08-5060-R | CEP20A03 | AP4800GYT-HF | AP4569GH | AP4955GM | AP4835GMT-HF
Keywords - 68P40 MOSFET datasheet
68P40 cross reference
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History: 5N60G-K08-5060-R | CEP20A03 | AP4800GYT-HF | AP4569GH | AP4955GM | AP4835GMT-HF



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