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68P40 Specs and Replacement

Type Designator: 68P40

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 684 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO252

68P40 substitution

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68P40 datasheet

 ..1. Size:1725K  goford
 68p40.pdf pdf_icon

68P40

GOFORD 68P40 Description The 68P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDSS RDS(ON) ID Schematic diagram @ 10V (typ) m -70A -40V 7.5 68P40 High density cell design for ultra low Rdson OGFD Fully characterized avalanche... See More ⇒

Detailed specifications: 3401L, 40N10K, 40P04, 45P40, 50N03, 5P40, 60N04, 6706A, K2611, 80N03, 80N04, 80N08TR, 8205A, 8205B, G3205, G1010, G3710

Keywords - 68P40 MOSFET specs

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