All MOSFET. 68P40 Datasheet

 

68P40 Datasheet and Replacement


   Type Designator: 68P40
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 106 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 684 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO252
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68P40 Datasheet (PDF)

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68P40

GOFORD68P40Description The 68P40 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDSS RDS(ON) IDSchematic diagram @10V (typ)m -70A-40V 7.568P40 High density cell design for ultra low Rdson OGFD Fully characterized avalanche

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 5N60G-K08-5060-R | CEP20A03 | AP4800GYT-HF | AP4569GH | AP4955GM | AP4835GMT-HF

Keywords - 68P40 MOSFET datasheet

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