16N50F Datasheet. Specs and Replacement

Type Designator: 16N50F  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 170 nS

Cossⓘ - Output Capacitance: 350 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO220F

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16N50F datasheet

 0.1. Size:393K  kec
kf16n50f.pdf pdf_icon

16N50F

KF16N50P/F SEMICONDUCTOR N CHANNEL MOS FIELD TECHNICAL DATA EFFECT TRANSISTOR General Description KF16N50P A This planar stripe MOSFET has better characteristics, such as fast O C switching time, low on resistance, low gate charge and excellent F avalanche characteristics. It is mainly suitable for active power factor E DIM MILLIMETERS G correction and switching mode power supp... See More ⇒

 0.2. Size:3975K  first semi
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16N50F

FIR16N50FG CREAT BY ART N-Channel Power MOSFET PIN Connection TO-220F VDSS 500 V ID 16 A PD (TC=25 ) 70 W RDS(ON) 0.4 G D S Features Fast Switching g Schematic dia ram D Low ON Resistance(Rdson 0.40 ) Low Gate Charge (Typical Data 50nC) G Low Reverse transfer capacitances(Typical 25.5pF) 100% Single Pulse avalanche energy Test S Marking Diagram Ap... See More ⇒

 0.3. Size:2457K  cn hmsemi
hm16n50 hm16n50f.pdf pdf_icon

16N50F

HM16N50 / HM16N50F 500V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 16A, 500V, RDS(on)typ. = 305m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge ( typical 52nC) This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching p... See More ⇒

Detailed specifications: 630A, 640, 18N20, 18N20A, 2N25, 3N25, 740, 840, 50N06, 13N50F, 20N50, 5N60F, 7N60F, 8N60A, 8N60AF, 10N60F, 12N60F

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