16N50F MOSFET. Datasheet pdf. Equivalent
Type Designator: 16N50F
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 38.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 170 nS
Cossⓘ - Output Capacitance: 350 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO220F
16N50F Transistor Equivalent Substitute - MOSFET Cross-Reference Search
16N50F Datasheet (PDF)
kf16n50f.pdf
KF16N50P/FSEMICONDUCTORN CHANNEL MOS FIELDTECHNICAL DATAEFFECT TRANSISTORGeneral Description KF16N50PAThis planar stripe MOSFET has better characteristics, such as fastOCswitching time, low on resistance, low gate charge and excellentFavalanche characteristics. It is mainly suitable for active power factorE DIM MILLIMETERSGcorrection and switching mode power supp
fir16n50fg.pdf
FIR16N50FGCREAT BY ARTN-Channel Power MOSFETPIN Connection TO-220FVDSS 500 VID 16 APD (TC=25) 70 WRDS(ON) 0.4 G D S Features Fast Switching gSchematic dia ram D Low ON Resistance(Rdson0.40) Low Gate Charge (Typical Data:50nC) G Low Reverse transfer capacitances(Typical:25.5pF) 100% Single Pulse avalanche energy Test S Marking DiagramAp
hm16n50 hm16n50f.pdf
HM16N50 / HM16N50F500V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 16A, 500V, RDS(on)typ. = 305m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge ( typical 52nC)This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingp
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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