G10N80BF PDF and Equivalents Search

 

G10N80BF Specs and Replacement

Type Designator: G10N80BF

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 55 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm

Package: TO220F

G10N80BF substitution

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G10N80BF datasheet

 ..1. Size:1442K  goford
 g10n80bf.pdf pdf_icon

G10N80BF

GOFORD G10N80BF N-Channel MOSFET VDSS RDS(on)(Typ) ID (Max) 800V 0.8 10A Applications ATX Power LCD Panel Power Features G RoHS Compliant & Halogen Free DS TO-220F Low ON Resistance Packages Not to Scale Low Gate Charge ESD Capability Improved Absolute Maximum Ratings Tc= 25 unless otherwise specified Symbol Parameter TO-220F Units VDSS Dra... See More ⇒

Detailed specifications: 10N65A , 10N65AF , 6N70F , 7N80F , 18N50A , G4N65 , G7N65 , G8N80BF , IRFP250N , 12N65A , 12N65AF , SVD4N65T , SVD4N65F , SVD2N60M , SVD2N60F , SVD2N60T , SVD2N60D .

History: U309 | SMK0270F | FDU6N25

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