All MOSFET. G10N80BF Datasheet

 

G10N80BF Datasheet and Replacement


   Type Designator: G10N80BF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 55 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
   Package: TO220F
 

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G10N80BF Datasheet (PDF)

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G10N80BF

GOFORDG10N80BFN-Channel MOSFET VDSS RDS(on)(Typ) ID (Max) 800V 0.8 10AApplications: ATX Power LCD Panel Power Features: G RoHS Compliant & Halogen Free DS TO-220F Low ON Resistance PackagesNot to Scale Low Gate Charge ESD Capability Improved Absolute Maximum Ratings Tc= 25 unless otherwise specified Symbol Parameter TO-220F UnitsVDSS Dra

Datasheet: 10N65A , 10N65AF , 6N70F , 7N80F , 18N50A , G4N65 , G7N65 , G8N80BF , AON7408 , 12N65A , 12N65AF , SVD4N65T , SVD4N65F , SVD2N60M , SVD2N60F , SVD2N60T , SVD2N60D .

History: PJE8406 | 24NM60L-TF1-T | SST108 | SI1428EDH | FHU100N03C | DMG1016V | G120N04A

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