All MOSFET. SVD4N65T Datasheet

 

SVD4N65T Datasheet and Replacement


   Type Designator: SVD4N65T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.3 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220-3L
 

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SVD4N65T Datasheet (PDF)

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 svd4n65t svd4n65f.pdf pdf_icon

SVD4N65T

SVD4N65T/SVD4N65F4A 650V N 2SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 11 22 33TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3@VGS=10V dv/dt

Datasheet: 7N80F , 18N50A , G4N65 , G7N65 , G8N80BF , G10N80BF , 12N65A , 12N65AF , 2N7000 , SVD4N65F , SVD2N60M , SVD2N60F , SVD2N60T , SVD2N60D , IPP15N03L , IPB15N03L , FTP10N40 .

History: FQP33N10L | FHD80N07C | AP3A010MT | AM6401 | IRFSZ32 | CEP6086 | RQJ0202VGDQA

Keywords - SVD4N65T MOSFET datasheet

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