SVD4N65T PDF and Equivalents Search

 

SVD4N65T Specs and Replacement

Type Designator: SVD4N65T

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.3 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220-3L

SVD4N65T substitution

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SVD4N65T datasheet

 ..1. Size:354K  silan
 svd4n65t svd4n65f.pdf pdf_icon

SVD4N65T

SVD4N65T/SVD4N65F 4A 650V N 2 SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 1 1 2 2 3 3 TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3 @VGS=10V dv/dt ... See More ⇒

Detailed specifications: 7N80F , 18N50A , G4N65 , G7N65 , G8N80BF , G10N80BF , 12N65A , 12N65AF , AON7408 , SVD4N65F , SVD2N60M , SVD2N60F , SVD2N60T , SVD2N60D , IPP15N03L , IPB15N03L , FTP10N40 .

Keywords - SVD4N65T MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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