SVD4N65F PDF and Equivalents Search

 

SVD4N65F Specs and Replacement

Type Designator: SVD4N65F

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19.3 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm

Package: TO220F-3L

SVD4N65F substitution

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SVD4N65F datasheet

 ..1. Size:354K  silan
 svd4n65t svd4n65f.pdf pdf_icon

SVD4N65F

SVD4N65T/SVD4N65F 4A 650V N 2 SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 1 1 2 2 3 3 TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3 @VGS=10V dv/dt ... See More ⇒

Detailed specifications: 18N50A, G4N65, G7N65, G8N80BF, G10N80BF, 12N65A, 12N65AF, SVD4N65T, 2SK3878, SVD2N60M, SVD2N60F, SVD2N60T, SVD2N60D, IPP15N03L, IPB15N03L, FTP10N40, FTA10N40

Keywords - SVD4N65F MOSFET specs

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