All MOSFET. SVD4N65F Datasheet

 

SVD4N65F MOSFET. Datasheet pdf. Equivalent


   Type Designator: SVD4N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 3.5 nC
   trⓘ - Rise Time: 19.3 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220F-3L

 SVD4N65F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SVD4N65F Datasheet (PDF)

 ..1. Size:354K  silan
 svd4n65t svd4n65f.pdf

SVD4N65F SVD4N65F

SVD4N65T/SVD4N65F4A 650V N 2SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 11 22 33TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3@VGS=10V dv/dt

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: AUIRFR2405 | IRFI9620G | F5042

 

 
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