All MOSFET. SVD4N65F Datasheet

 

SVD4N65F Datasheet and Replacement


   Type Designator: SVD4N65F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19.3 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220F-3L
 

 SVD4N65F substitution

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SVD4N65F Datasheet (PDF)

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SVD4N65F

SVD4N65T/SVD4N65F4A 650V N 2SVD4N65T/F N MOS S-RinTM VDMOS 1 3 1. 2. 3. AC-DC DC-DC H PMW 11 22 33TO-220F-3L TO-220-3L 4A 650V RDS(on) =2.3@VGS=10V dv/dt

Datasheet: 18N50A , G4N65 , G7N65 , G8N80BF , G10N80BF , 12N65A , 12N65AF , SVD4N65T , 8205A , SVD2N60M , SVD2N60F , SVD2N60T , SVD2N60D , IPP15N03L , IPB15N03L , FTP10N40 , FTA10N40 .

History: IPP07N03L | ME2323D | FHP7N65B | 2N7002AQ | DMT7N65 | IRLR024PBF | SM1A20NSU

Keywords - SVD4N65F MOSFET datasheet

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