All MOSFET. SVD2N60M Datasheet

 

SVD2N60M Datasheet and Replacement


   Type Designator: SVD2N60M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 30 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.6 Ohm
   Package: TO251-3L
 

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SVD2N60M Datasheet (PDF)

 7.1. Size:603K  silan
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SVD2N60M

SVD2N60M/F/T/D_Datasheet 2A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N60M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior s

Datasheet: G4N65 , G7N65 , G8N80BF , G10N80BF , 12N65A , 12N65AF , SVD4N65T , SVD4N65F , SKD502T , SVD2N60F , SVD2N60T , SVD2N60D , IPP15N03L , IPB15N03L , FTP10N40 , FTA10N40 , 2SK725 .

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