2SK3674-01S Datasheet and Replacement. Cross Reference Search

2SK3674-01S Datasheet (PDF)

..1. Size:357K inchange semiconductor
2sk3674-01s.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3674-01SFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

0.1. Size:357K inchange semiconductor
2sk3674-01sj.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3674-01SJFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand s

4.1. Size:270K fuji
2sk3674-01l-s-sj.pdf pdf_icon

2SK3674-01L,S,SJ200304FUJI POWER MOSFETN-CHANNEL SILICON POWER MOSFETOutline Drawings [mm]Super FAP-G SeriesFeaturesHigh speed switchingLow on-resistanceNo secondary breadownLow driving powerAvalanche-proofApplicationsP4Switching regulatorsUPS (Uninterruptible Power Supply)DC-DC convertersMaximum ratings and characteristicAbsolute maximum ratings(Tc=25C unl

4.2. Size:283K inchange semiconductor
2sk3674-01l.pdf pdf_icon

isc N-Channel MOSFET Transistor 2SK3674-01LFEATURESDrain Current : I = 7.0A@ T =25D CDrain Source Voltage: V = 900V(Min)DSSStatic Drain-Source On-Resistance: R = 2.0(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

Datasheet: 2SK793 , 2SK1363 , 2SK2196 , 2SK2806-01 , 2SK3455 , 2SK3455B , 2SK3534-01MR , 2SK3674-01L , AON7506 , 2SK3674-01SJ , 2SK3899 , FTK9451 , FTK9452 , FTK03N10 , FTK100N10P , FTK1013 , FTK1016 .