All MOSFET. FTK03N10 Datasheet

 

FTK03N10 Datasheet and Replacement


   Type Designator: FTK03N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7.4 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
   Package: SOT89
 

 FTK03N10 substitution

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FTK03N10 Datasheet (PDF)

 ..1. Size:315K  first silicon
 ftk03n10.pdf pdf_icon

FTK03N10

SEMICONDUCTORFTK03N10TECHNICAL DATAN-Channel MOSFET ACHGDIM MILLIMETERSA 4.70 MAX_DESCRIPTIONB 2.50 0.20C 1.70 MAXDDD 0.45 0.15/-0.10KE 4.25 MAXThe FTK03N10 usesadvanced trench technology and design to _F F F 1.50 0.10G 0.40 TYPH 1.7 MAXprovide excellent RDS(ON) with low gate charge . J 0.7 MINK 0.5 0.15/-0.101 2 3This device is suitable f

Datasheet: 2SK3455B , 2SK3534-01MR , 2SK3674-01L , 2SK3674-01S , 2SK3674-01SJ , 2SK3899 , FTK9451 , FTK9452 , IRFP250 , FTK100N10P , FTK1013 , FTK1016 , FTK1090 , FTK10N10 , FTK10N60DD , FTK10N60F , FTK10N60P .

History: WFF840 | ELM56801EA | KI2300 | EM6K7 | APTC60DAM18CTG | DMP6110SSD | HUFA75829D3S

Keywords - FTK03N10 MOSFET datasheet

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