FTK03N10 Specs and Replacement
Type Designator: FTK03N10
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.4 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: SOT89
FTK03N10 substitution
- MOSFET ⓘ Cross-Reference Search
FTK03N10 datasheet
ftk03n10.pdf
SEMICONDUCTOR FTK03N10 TECHNICAL DATA N-Channel MOSFET A C H G DIM MILLIMETERS A 4.70 MAX _ DESCRIPTION B 2.50 0.20 C 1.70 MAX D D D 0.45 0.15/-0.10 K E 4.25 MAX The FTK03N10 usesadvanced trench technology and design to _ F F F 1.50 0.10 G 0.40 TYP H 1.7 MAX provide excellent RDS(ON) with low gate charge . J 0.7 MIN K 0.5 0.15/-0.10 1 2 3 This device is suitable f... See More ⇒
Detailed specifications: 2SK3455B, 2SK3534-01MR, 2SK3674-01L, 2SK3674-01S, 2SK3674-01SJ, 2SK3899, FTK9451, FTK9452, AON7506, FTK100N10P, FTK1013, FTK1016, FTK1090, FTK10N10, FTK10N60DD, FTK10N60F, FTK10N60P
Keywords - FTK03N10 MOSFET specs
FTK03N10 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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