FTK8N80P Spec and Replacement
Type Designator: FTK8N80P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 142 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
Package: TO220
FTK8N80P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK8N80P Specs
ftk8n80p f dd.pdf
SEMICONDUCTOR FTK8N80P/D/DD TECHNICAL DATA 8.0 Amps, 800 Volts N-Channel MOS-FET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse in... See More ⇒
ftk8n65p f dd.pdf
SEMICONDUCTOR FTK8N65P / F / DD TECHNICAL DATA 8.0 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul... See More ⇒
Detailed specifications: FTK8810 , FTK8810L , FTK8822 , FTK8N65DD , FTK8N65F , FTK8N65P , FTK8N80DD , FTK8N80F , IRF520 , FTK9435 , FTK9926 , FTK80N03D , FTK80N08 , FTK80N10P , FTK8205A , FTK830P , FTK830F .
Keywords - FTK8N80P MOSFET specs
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