All MOSFET. FTK8N80P Datasheet

 

FTK8N80P Datasheet and Replacement


   Type Designator: FTK8N80P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 142 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 7.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm
   Package: TO220
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FTK8N80P Datasheet (PDF)

 ..1. Size:272K  first silicon
 ftk8n80p f dd.pdf pdf_icon

FTK8N80P

SEMICONDUCTORFTK8N80P/D/DDTECHNICAL DATA8.0 Amps, 800 Volts N-Channel MOS-FETDESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superior TO-220switching performance,and Withstand high energy pulsein

 9.1. Size:579K  first silicon
 ftk8n65p f dd.pdf pdf_icon

FTK8N80P

SEMICONDUCTORFTK8N65P / F / DDTECHNICAL DATA8.0 Amps, 650 VoltsN-CHANNEL MOSFET DESCRIPTIONThese N-Channel enhancement mode power field effectP :Transistors are produced using planar stripe, DMOStechnology.1This advanced technology has been especially tailoredto minimize on - state resistance , provide superiorTO-220switching performance,and Withstand high energy pul

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History: 2SK3116 | WSF3085 | 2SJ460 | IRFU320 | STL30P3LLH6 | IRF40H233 | SVD50N06T

Keywords - FTK8N80P MOSFET datasheet

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