FTK8N80P Datasheet. Specs and Replacement

Type Designator: FTK8N80P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 142 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.9 Ohm

Package: TO220

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FTK8N80P datasheet

 ..1. Size:272K  first silicon
 ftk8n80p f dd.pdf pdf_icon

FTK8N80P

SEMICONDUCTOR FTK8N80P/D/DD TECHNICAL DATA 8.0 Amps, 800 Volts N-Channel MOS-FET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse in... See More ⇒

 9.1. Size:579K  first silicon
 ftk8n65p f dd.pdf pdf_icon

FTK8N80P

SEMICONDUCTOR FTK8N65P / F / DD TECHNICAL DATA 8.0 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul... See More ⇒

Detailed specifications: FTK8810, FTK8810L, FTK8822, FTK8N65DD, FTK8N65F, FTK8N65P, FTK8N80DD, FTK8N80F, K3569, FTK9435, FTK9926, FTK80N03D, FTK80N08, FTK80N10P, FTK8205A, FTK830P, FTK830F

Keywords - FTK8N80P MOSFET specs

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