FTK8N80P MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK8N80P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 142 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 7.5 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 100 nS
Drain-Source Capacitance (Cd): 120 pF
Maximum Drain-Source On-State Resistance (Rds): 1.9 Ohm
Package: TO220
FTK8N80P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK8N80P Datasheet (PDF)
1.1. ftk8n80p f dd.pdf 
Size:272K _first_silicon
SEMICONDUCTOR FTK8N80P/D/DD TECHNICAL DATA 8.0 Amps, 800 Volts N-Channel MOS-FET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pulse in
5.1. ftk8n65p f dd.pdf Size:579K _first_silicon
SEMICONDUCTOR FTK8N65P / F / DD TECHNICAL DATA 8.0 Amps, 650 Volts N-CHANNEL MOSFET DESCRIPTION These N-Channel enhancement mode power field effect P : Transistors are produced using planar stripe, DMOS technology. 1 This advanced technology has been especially tailored to minimize on - state resistance , provide superior TO-220 switching performance,and Withstand high energy pul
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
