All MOSFET. FTK9926 Datasheet

 

FTK9926 Datasheet and Replacement


   Type Designator: FTK9926
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 4.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP8
 

 FTK9926 substitution

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FTK9926 Datasheet (PDF)

 ..1. Size:2960K  first silicon
 ftk9926.pdf pdf_icon

FTK9926

SEMICONDUCTOR FTK9926TECHNICAL DATAFEATURE Advanced trench process technology High density cell design for ultra low on-resistance N-channel N-channel High power and current handing capability Schematic diagramD 2 D 2 D 1 D 1 Ideal for Liion battery pack applications 6 58 7Q99261 2 43S 2 G 2 G 1S 1Marking and pin AssignmentSOP-8 top viewPACKAGE MARKING AN

Datasheet: FTK8822 , FTK8N65DD , FTK8N65F , FTK8N65P , FTK8N80DD , FTK8N80F , FTK8N80P , FTK9435 , IRF2807 , FTK80N03D , FTK80N08 , FTK80N10P , FTK8205A , FTK830P , FTK830F , FTK830I , FTK830D .

History: PHM18NQ15T | IPP60R600E6

Keywords - FTK9926 MOSFET datasheet

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