FTK9926 Specs and Replacement
Type Designator: FTK9926
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOP8
FTK9926 substitution
- MOSFET ⓘ Cross-Reference Search
FTK9926 datasheet
ftk9926.pdf
SEMICONDUCTOR FTK9926 TECHNICAL DATA FEATURE Advanced trench process technology High density cell design for ultra low on-resistance N-channel N-channel High power and current handing capability Schematic diagram D 2 D 2 D 1 D 1 Ideal for Liion battery pack applications 6 5 8 7 Q9926 1 2 4 3 S 2 G 2 G 1 S 1 Marking and pin Assignment SOP-8 top view PACKAGE MARKING AN... See More ⇒
Detailed specifications: FTK8822, FTK8N65DD, FTK8N65F, FTK8N65P, FTK8N80DD, FTK8N80F, FTK8N80P, FTK9435, STF13NM60N, FTK80N03D, FTK80N08, FTK80N10P, FTK8205A, FTK830P, FTK830F, FTK830I, FTK830D
Keywords - FTK9926 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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