FTK9926 PDF and Equivalents Search

 

FTK9926 Specs and Replacement

Type Designator: FTK9926

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 4.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 60 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP8

FTK9926 substitution

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FTK9926 datasheet

 ..1. Size:2960K  first silicon
ftk9926.pdf pdf_icon

FTK9926

SEMICONDUCTOR FTK9926 TECHNICAL DATA FEATURE Advanced trench process technology High density cell design for ultra low on-resistance N-channel N-channel High power and current handing capability Schematic diagram D 2 D 2 D 1 D 1 Ideal for Liion battery pack applications 6 5 8 7 Q9926 1 2 4 3 S 2 G 2 G 1 S 1 Marking and pin Assignment SOP-8 top view PACKAGE MARKING AN... See More ⇒

Detailed specifications: FTK8822, FTK8N65DD, FTK8N65F, FTK8N65P, FTK8N80DD, FTK8N80F, FTK8N80P, FTK9435, STF13NM60N, FTK80N03D, FTK80N08, FTK80N10P, FTK8205A, FTK830P, FTK830F, FTK830I, FTK830D

Keywords - FTK9926 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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