All MOSFET. FTK8205A Datasheet

 

FTK8205A Datasheet and Replacement


   Type Designator: FTK8205A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0275 Ohm
   Package: TSSOP8
 

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FTK8205A Datasheet (PDF)

 ..1. Size:287K  first silicon
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FTK8205A

SEMICONDUCTOR FTK8205ATECHNICAL DATAD 1D 2DESCRIPTION The FTK8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G 1 G 2with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S 1 S 2Schematic diagram GENERAL FEATURES VDS = 20V,ID = 6A D1 D2RD

Datasheet: FTK8N80DD , FTK8N80F , FTK8N80P , FTK9435 , FTK9926 , FTK80N03D , FTK80N08 , FTK80N10P , AO3401 , FTK830P , FTK830F , FTK830I , FTK830D , FTK84 , FTK840P , FTK840F , FTK84D .

History: IXTP110N055P | IRF5803D2PBF | STP10NK80Z | KTJ6131E | IRF6729MPBF | VMM650-01F | PSMN5R0-80PS

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