All MOSFET. FTK630P Datasheet

 

FTK630P Datasheet and Replacement


   Type Designator: FTK630P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
   Package: TO220
 

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FTK630P Datasheet (PDF)

 ..1. Size:379K  first silicon
 ftk630 ftk630p f.pdf pdf_icon

FTK630P

SEMICONDUCTORFTK630P / FTECHNICAL DATAMOSFET9A, 200V, 0.4 , N-CHANNELPOWER MOSFETSP :1DESCRIPTIONTO-220The N-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.F :1TO-220FFEATURES* 9A, 200V, Low RDS(ON

Datasheet: FTK7N65P , FTK7N65F , FTK7N65DD , FTK75N75 , FTK10N65DD , FTK10N65F , FTK10N65P , FTK123 , AO4468 , FTK630F , FTK7000 , FTK7002 , FTK7002D , FTK7002E , FTK7002EN , FTK7002K , FTK7002U .

History: AUIRFL014N | AFN6561 | AP9977AGH-HF | AP6N6R5LMT | HUFA76445P3 | DG2N60-220F | AOB4S60L

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