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FTK630P Specs and Replacement

Type Designator: FTK630P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 250 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm

Package: TO220

FTK630P substitution

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FTK630P datasheet

 ..1. Size:379K  first silicon
 ftk630 ftk630p f.pdf pdf_icon

FTK630P

SEMICONDUCTOR FTK630P / F TECHNICAL DATA MOSFET 9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS P 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. F 1 TO-220F FEATURES * 9A, 200V, Low RDS(ON... See More ⇒

Detailed specifications: FTK7N65P, FTK7N65F, FTK7N65DD, FTK75N75, FTK10N65DD, FTK10N65F, FTK10N65P, FTK123, 60N06, FTK630F, FTK7000, FTK7002, FTK7002D, FTK7002E, FTK7002EN, FTK7002K, FTK7002U

Keywords - FTK630P MOSFET specs

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