FTK630F Specs and Replacement
Type Designator: FTK630F
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 75 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.85 Ohm
Package: TO220F
FTK630F substitution
- MOSFET ⓘ Cross-Reference Search
FTK630F datasheet
ftk630 ftk630p f.pdf
SEMICONDUCTOR FTK630P / F TECHNICAL DATA MOSFET 9A, 200V, 0.4 , N-CHANNEL POWER MOSFETS P 1 DESCRIPTION TO-220 The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers. F 1 TO-220F FEATURES * 9A, 200V, Low RDS(ON... See More ⇒
Detailed specifications: FTK7N65F, FTK7N65DD, FTK75N75, FTK10N65DD, FTK10N65F, FTK10N65P, FTK123, FTK630P, IRFP064N, FTK7000, FTK7002, FTK7002D, FTK7002E, FTK7002EN, FTK7002K, FTK7002U, FTK70N06
Keywords - FTK630F MOSFET specs
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