All MOSFET. FTK730F Datasheet

 

FTK730F MOSFET. Datasheet pdf. Equivalent


   Type Designator: FTK730F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 93 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 5.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F

 FTK730F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTK730F Datasheet (PDF)

 8.1. Size:391K  first silicon
 ftk730p f.pdf

FTK730F FTK730F

SEMICONDUCTORFTK730P / FTECHNICAL DATAMOSFET6A, 400V, 1.0 OHM,N-CHANNEL POWER MOSFETP :1DESCRIPTIONTO-220The FTK730 power MOSFET is designed for high voltage, highspeed power switching applications such as switching powersuppliess, switching adaptors.F :1TO-220FFEATURES* 6A, 400V, Low RDS(ON) (1.0)* Single Pulse Avalanche Energy Rated* Rugged - SOA is Pow

 9.1. Size:312K  first silicon
 ftk7328.pdf

FTK730F FTK730F

SEMICONDUCTOR FTK7328 TECHNICAL DATA Dual P-Channel MOSFET D1D2G1 G2DESCRIPTIONThe FTK7328 uses advanced processingS1 S2techniques to achieve extremely low on-resistance.Schematic diagramThis benefit, combined with the ruggedized D 1 D 1 D2 D 28 7 6 5device design that the MOSFETs are well know for.Q7328provides the designer with an extremely efficient41 2

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History: LSE55R140GF | PS06P30SA | ZVN2110ASTZ | IPU60R1K4C6 | IPW50R250CP

 

 
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