FTK730P MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK730P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 93 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 5.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 100 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220
FTK730P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK730P Datasheet (PDF)
ftk730p f.pdf
SEMICONDUCTORFTK730P / FTECHNICAL DATAMOSFET6A, 400V, 1.0 OHM,N-CHANNEL POWER MOSFETP :1DESCRIPTIONTO-220The FTK730 power MOSFET is designed for high voltage, highspeed power switching applications such as switching powersuppliess, switching adaptors.F :1TO-220FFEATURES* 6A, 400V, Low RDS(ON) (1.0)* Single Pulse Avalanche Energy Rated* Rugged - SOA is Pow
ftk7328.pdf
SEMICONDUCTOR FTK7328 TECHNICAL DATA Dual P-Channel MOSFET D1D2G1 G2DESCRIPTIONThe FTK7328 uses advanced processingS1 S2techniques to achieve extremely low on-resistance.Schematic diagramThis benefit, combined with the ruggedized D 1 D 1 D2 D 28 7 6 5device design that the MOSFETs are well know for.Q7328provides the designer with an extremely efficient41 2
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