All MOSFET. FTK640P Datasheet

 

FTK640P Datasheet and Replacement


   Type Designator: FTK640P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 19.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 190 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
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FTK640P Datasheet (PDF)

 ..1. Size:338K  first silicon
 ftk640p f.pdf pdf_icon

FTK640P

SEMICONDUCTORFTK640P / FTECHNICAL DATA19.4A, 200V, 0.18 , N-CHANNELPOWER MOSFETP :1DESCRIPTIONTO-220The N-Channel enhancement mode silicon gate power MOSFETis designed for high voltage, high speed power switchingapplications such as switching regulators, switching converters,solenoid, motor drivers, relay drivers.F :1TO-220FFEATURES* 19.4A, 200V, Low RDS(ON)

 8.1. Size:287K  first silicon
 ftk6401.pdf pdf_icon

FTK640P

SEMICONDUCTORFTK6401TECHNICAL DATADDESCRIPTION The FTK6401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. SSchematic diagram GENERAL FEATURES VDS = -20V,ID = -4.3A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: BRI50N03 | 2SK3471 | FQD10N20C | 2SJ605 | HMS170N03D | HX70N6 | JSM36326

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