FTK6601S Specs and Replacement

Type Designator: FTK6601S

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 5.8(4.2) A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035(0.065) Ohm

Package: SOP8

FTK6601S substitution

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FTK6601S datasheet

 ..1. Size:473K  first silicon
 ftk6601s.pdf pdf_icon

FTK6601S

SEMICONDUCTOR FTK6601S TECHNICAL DATA P-channel and N-channel Complementary MOSFETS General Description The FTK6601S uses advanced trench technology to provide excellent SOP8 and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. FEATURES Including a N-ch FTK3400 MOS and a P-ch Surface mount package ... See More ⇒

 7.1. Size:372K  first silicon
 ftk6601.pdf pdf_icon

FTK6601S

SEMICONDUCTOR FTK6601 TECHNICAL DATA P-channel and N-channel Complementary MOSFETS General Description SOT-23-6L The FTK6601 uses advanced trench technology to provide excellent and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. MARKING L6601 Maximum ratings (Ta=25 unless otherwise noted) Value P... See More ⇒

Detailed specifications: FTK6014, FTK6014A, FTK60N04D, FTK60P05S, FTK6401, FTK640F, FTK640P, FTK6601, IRFB4115, FTK6808, FTK6N70P, FTK6N70F, FTK6N70I, FTK6N70D, FTK50N06D, FTK50N06DD, FTK50N06F

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs