All MOSFET. FTK6601S Datasheet

 

FTK6601S Datasheet and Replacement


   Type Designator: FTK6601S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 5.8(4.2) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035(0.065) Ohm
   Package: SOP8
 

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FTK6601S Datasheet (PDF)

 ..1. Size:473K  first silicon
 ftk6601s.pdf pdf_icon

FTK6601S

SEMICONDUCTORFTK6601STECHNICAL DATAP-channel and N-channel Complementary MOSFETS General Description The FTK6601S uses advanced trench technology to provide excellent SOP8 and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications.FEATURES Including a N-ch FTK3400 MOS and a P-ch Surface mount package

 7.1. Size:372K  first silicon
 ftk6601.pdf pdf_icon

FTK6601S

SEMICONDUCTORFTK6601TECHNICAL DATAP-channel and N-channel Complementary MOSFETS General Description SOT-23-6L The FTK6601 uses advanced trench technology to provide excellent and low gate charge. The complementary MOSFETS form a high-speed power inverter and suitable for a multitude of applications. MARKING: L6601 Maximum ratings (Ta=25 unless otherwise noted) Value P

Datasheet: FTK6014 , FTK6014A , FTK60N04D , FTK60P05S , FTK6401 , FTK640F , FTK640P , FTK6601 , IRFP250N , FTK6808 , FTK6N70P , FTK6N70F , FTK6N70I , FTK6N70D , FTK50N06D , FTK50N06DD , FTK50N06F .

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