FTK6808 Specs and Replacement

Type Designator: FTK6808

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 181 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 68 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 84 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15.6 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm

Package: TO220

FTK6808 substitution

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FTK6808 datasheet

 ..1. Size:601K  first silicon
 ftk6808.pdf pdf_icon

FTK6808

SEMICONDUCTOR FTK6808 TECHNICAL DATA Feathers ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description The FTK6808 is a new generation of middle voltage and high current N Channel enhancement mode trench power This new ... See More ⇒

Detailed specifications: FTK6014A, FTK60N04D, FTK60P05S, FTK6401, FTK640F, FTK640P, FTK6601, FTK6601S, 2N7000, FTK6N70P, FTK6N70F, FTK6N70I, FTK6N70D, FTK50N06D, FTK50N06DD, FTK50N06F, FTK50N10P

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