All MOSFET. FTK6808 Datasheet

 

FTK6808 Datasheet and Replacement


   Type Designator: FTK6808
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 181 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 68 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 84 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15.6 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO220
 

 FTK6808 substitution

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FTK6808 Datasheet (PDF)

 ..1. Size:601K  first silicon
 ftk6808.pdf pdf_icon

FTK6808

SEMICONDUCTOR FTK6808 TECHNICAL DATAFeathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The FTK6808 is a new generation of middle voltage and highcurrent NChannel enhancement mode trench power This new

Datasheet: FTK6014A , FTK60N04D , FTK60P05S , FTK6401 , FTK640F , FTK640P , FTK6601 , FTK6601S , IRF9540 , FTK6N70P , FTK6N70F , FTK6N70I , FTK6N70D , FTK50N06D , FTK50N06DD , FTK50N06F , FTK50N10P .

History: NVMFS6H848NL | BSC020N03MSG | HM60N02K | NCEAP0135AK | AOY66620 | MTN138KS3 | 2SK2870L

Keywords - FTK6808 MOSFET datasheet

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