FTK6808 MOSFET. Datasheet pdf. Equivalent
Type Designator: FTK6808
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 181 W
Maximum Drain-Source Voltage |Vds|: 68 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 84 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 90 nC
Rise Time (tr): 15.6 nS
Drain-Source Capacitance (Cd): 300 pF
Maximum Drain-Source On-State Resistance (Rds): 0.008 Ohm
Package: TO220
FTK6808 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FTK6808 Datasheet (PDF)
..1. Size:601K first silicon
ftk6808.pdf
ftk6808.pdf
SEMICONDUCTOR FTK6808 TECHNICAL DATAFeathers: ID =84A Advanced trench process technology BV=68V Ultra low Rdson, typical 6mohm Rdson=8mohm High avalanche energy, 100% test Fully characterized avalanche voltage and current Description: The FTK6808 is a new generation of middle voltage and highcurrent NChannel enhancement mode trench power This new
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