All MOSFET. FTK6N70P Datasheet

 

FTK6N70P MOSFET. Datasheet pdf. Equivalent


   Type Designator: FTK6N70P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.53 nC
   trⓘ - Rise Time: 37.87 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO220

 FTK6N70P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FTK6N70P Datasheet (PDF)

 ..1. Size:638K  first silicon
 ftk6n70p f d i.pdf

FTK6N70P FTK6N70P

SEMICONDUCTORFTK6N70P/F/D/ITECHNICAL DATAPower MOSFET6.0 Amps, 700 VoltsI :N-CHANNEL MOSFET 1TO - 251D :1DESCRIPTIONTO - 252The FTK6N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P :charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually us

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