All MOSFET. FTK6N70F Datasheet

 

FTK6N70F Datasheet and Replacement


   Type Designator: FTK6N70F
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 37.87 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: TO220F
 

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FTK6N70F Datasheet (PDF)

 7.1. Size:638K  first silicon
 ftk6n70p f d i.pdf pdf_icon

FTK6N70F

SEMICONDUCTORFTK6N70P/F/D/ITECHNICAL DATAPower MOSFET6.0 Amps, 700 VoltsI :N-CHANNEL MOSFET 1TO - 251D :1DESCRIPTIONTO - 252The FTK6N70 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate P :charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually us

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFP333 | INJ0001AC1

Keywords - FTK6N70F MOSFET datasheet

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