FTK55P30D Specs and Replacement

Type Designator: FTK55P30D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 45 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO252

FTK55P30D substitution

- MOSFET ⓘ Cross-Reference Search

 

FTK55P30D datasheet

 ..1. Size:373K  first silicon
 ftk55p30d.pdf pdf_icon

FTK55P30D

SEMICONDUCTOR FTK55P30D TECHNICAL DATA FTK55P30D P-Channel Power MOSFET A I DESCRIPTION C J The FTK55P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERS A 6 50 0 2 B 5 60 0 2 This device is well suited for high current load applications. C 5 20 0 2 D 1 50 0 2 E 2 70 0 2 F 2 30 0 1 H H 1 00 ... See More ⇒

Detailed specifications: FTK6N70F, FTK6N70I, FTK6N70D, FTK50N06D, FTK50N06DD, FTK50N06F, FTK50N10P, FTK50P03PDFN56, 2N7002, FTK5903DC, FTK5N50D, FTK5N80DD, FTK5N80F, FTK5N80P, FTK50N03D, FTK50N06P, FTK1206

Keywords - FTK55P30D MOSFET specs

 FTK55P30D cross reference

 FTK55P30D equivalent finder

 FTK55P30D pdf lookup

 FTK55P30D substitution

 FTK55P30D replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.