All MOSFET. FTK55P30D Datasheet

 

FTK55P30D Datasheet and Replacement


   Type Designator: FTK55P30D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 45 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO252
 

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FTK55P30D Datasheet (PDF)

 ..1. Size:373K  first silicon
 ftk55p30d.pdf pdf_icon

FTK55P30D

SEMICONDUCTORFTK55P30DTECHNICAL DATAFTK55P30D P-Channel Power MOSFET AIDESCRIPTION CJThe FTK55P30D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2This device is well suited for high current load applications. C 5 20 0 2D 1 50 0 2E 2 70 0 2F 2 30 0 1HH 1 00

Datasheet: FTK6N70F , FTK6N70I , FTK6N70D , FTK50N06D , FTK50N06DD , FTK50N06F , FTK50N10P , FTK50P03PDFN56 , K3569 , FTK5903DC , FTK5N50D , FTK5N80DD , FTK5N80F , FTK5N80P , FTK50N03D , FTK50N06P , FTK1206 .

History: G30N20F | AP07N70CI-H | 2SK3847 | FMI12N50E | WMK18N50D1B | WMK16N10T1 | H5N60D

Keywords - FTK55P30D MOSFET datasheet

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