FTK5903DC Specs and Replacement

Type Designator: FTK5903DC

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 4.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 260 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: DFNWB3X2-8L-B

FTK5903DC substitution

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FTK5903DC datasheet

 ..1. Size:696K  first silicon
 ftk5903dc.pdf pdf_icon

FTK5903DC

SEMICONDUCTOR FTK5903DC TECHNICAL DATA FTK5903DC Dual P-Channel MOSFET DFNWB 3*2-8L-B ID V(BR)DSS RDS(on)MAX m @-4.5V 70 5A -20V -4. 90 m @-2.5V m @-1.8V 120 APPLICATION FEATURE Load Swith,PA Switch and Battery Switch for Portable Surface Mount Package Devices and Game Consoles TrenchFET Power MOSFET Equivalent Circuit MARKING MAXIMUM RA TIN... See More ⇒

Detailed specifications: FTK6N70I, FTK6N70D, FTK50N06D, FTK50N06DD, FTK50N06F, FTK50N10P, FTK50P03PDFN56, FTK55P30D, IRF9540N, FTK5N50D, FTK5N80DD, FTK5N80F, FTK5N80P, FTK50N03D, FTK50N06P, FTK1206, FTK1208

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