All MOSFET. FTK5903DC Datasheet

 

FTK5903DC Datasheet and Replacement


   Type Designator: FTK5903DC
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 260 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: DFNWB3X2-8L-B
 

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FTK5903DC Datasheet (PDF)

 ..1. Size:696K  first silicon
 ftk5903dc.pdf pdf_icon

FTK5903DC

SEMICONDUCTORFTK5903DCTECHNICAL DATAFTK5903DC Dual P-Channel MOSFET DFNWB 3*2-8L-BID V(BR)DSS RDS(on)MAX m@-4.5V705A -20V -4.90 m@-2.5Vm@-1.8V120APPLICATION FEATURE Load Swith,PA Switch and Battery Switch for Portable Surface Mount Package Devices and Game Consoles TrenchFET Power MOSFET Equivalent Circuit MARKING MAXIMUM RA TIN

Datasheet: FTK6N70I , FTK6N70D , FTK50N06D , FTK50N06DD , FTK50N06F , FTK50N10P , FTK50P03PDFN56 , FTK55P30D , IRF1010E , FTK5N50D , FTK5N80DD , FTK5N80F , FTK5N80P , FTK50N03D , FTK50N06P , FTK1206 , FTK1208 .

History: IRF1407PBF | TMP10N65 | APQ25SN06AA | FMV07N50E | IXFK64N50P | AOT8N50 | KF5N60D

Keywords - FTK5903DC MOSFET datasheet

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