All MOSFET. IRF530NS Datasheet

 

IRF530NS MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF530NS

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 79 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 17 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 24.7 nC

Maximum Drain-Source On-State Resistance (Rds): 0.11 Ohm

Package: D2PAK

IRF530NS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF530NS Datasheet (PDF)

1.1. irf530nspbf.pdf Size:279K _international_rectifier

IRF530NS
IRF530NS

PD - 95100 IRF530NSPbF IRF530NLPbF HEXFET Power MOSFET l Advanced Process Technology D VDSS = 100V l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 90mΩ G l Fast Switching l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achi

1.2. irf530ns.pdf Size:178K _international_rectifier

IRF530NS
IRF530NS

PD - 91352A IRF530NS/L HEXFET Power MOSFET Advanced Process Technology D VDSS =100V Surface Mount (IRF530NS) Low-profile through-hole (IRF530NL) 175C Operating Temperature RDS(on) = 0.11? G Fast Switching Fully Avalanche Rated ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resis

 3.1. irf530n 1.pdf Size:98K _philips

IRF530NS
IRF530NS

Philips Semiconductors Product specification N-channel TrenchMOS? transistor IRF530N FEATURES SYMBOL QUICK REFERENCE DATA Trench technology d Low on-state resistance VDSS = 100 V Fast switching Low thermal resistance ID = 17 A g RDS(ON) ? 110 m? s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel enhancement mode PIN DESCRIPTION tab field-effect power transistor in a

3.2. irf530npbf.pdf Size:183K _international_rectifier

IRF530NS
IRF530NS

PD - 94962 IRF530NPbF HEXFET Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 100V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 90mΩ l Fast Switching G l Fully Avalanche Rated ID = 17A l Lead-Free S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremel

 3.3. irf530n.pdf Size:212K _international_rectifier

IRF530NS
IRF530NS

PD - 91351 IRF530N HEXFET Power MOSFET Advanced Process Technology D VDSS = 100V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 90m? G Fast Switching Fully Avalanche Rated ID = 17A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si

Datasheet: IRF530 , IRF5305 , IRF5305L , IRF5305S , IRF530A , IRF530FI , IRF530N , IRF530NL , IRF3710 , IRF531 , IRF532 , IRF533 , IRF540 , IRF540A , IRF540FI , IRF540N , IRF540NL .

 
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