FTK15N10D Specs and Replacement

Type Designator: FTK15N10D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 39 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 58 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO252

FTK15N10D substitution

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FTK15N10D datasheet

 ..1. Size:865K  first silicon
ftk15n10d.pdf pdf_icon

FTK15N10D

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Detailed specifications: FTK1216, FTK12N10S, FTK12N65DD, FTK12N65F, FTK12N65P, FTK138, FTK138D, FTK138U, IRF530, FTK1N60P, FTK1N60F, FTK1N60D, FTK1N60I, FTK1N60T, FTK1N60L, FTK2N60D, FTK2N60F

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