FTK15N10D Specs and Replacement
Type Designator: FTK15N10D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 39 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 58 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO252
FTK15N10D substitution
- MOSFET ⓘ Cross-Reference Search
FTK15N10D datasheet
Detailed specifications: FTK1216, FTK12N10S, FTK12N65DD, FTK12N65F, FTK12N65P, FTK138, FTK138D, FTK138U, IRF530, FTK1N60P, FTK1N60F, FTK1N60D, FTK1N60I, FTK1N60T, FTK1N60L, FTK2N60D, FTK2N60F
Keywords - FTK15N10D MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: TPC8A03-H
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