All MOSFET. FTK15N10D Datasheet

 

FTK15N10D Datasheet and Replacement


   Type Designator: FTK15N10D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 39 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

 FTK15N10D substitution

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FTK15N10D Datasheet (PDF)

 ..1. Size:865K  first silicon
 ftk15n10d.pdf pdf_icon

FTK15N10D

SEMICONDUCTORFTK15N10DTECHNICAL DATAFTK15N10D N-Channel Power MOSFET AIGENERAL DESCRIPTION CJThe FTK15N10D provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. DIM MILLIMETERSA 6 50 0 2B 5 60 0 2C 5 20 0 2D 1 50 0 2E 2 70 0 2FEATURE F 2 30

Datasheet: FTK1216 , FTK12N10S , FTK12N65DD , FTK12N65F , FTK12N65P , FTK138 , FTK138D , FTK138U , AO4407 , FTK1N60P , FTK1N60F , FTK1N60D , FTK1N60I , FTK1N60T , FTK1N60L , FTK2N60D , FTK2N60F .

History: 7N65G-TQ2-R | AP78T10GP | RQJ0305EQDQS | IXTH96N20P | ME2604-G | BRCS120N02ZJ | IPD16CN10NG

Keywords - FTK15N10D MOSFET datasheet

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