FTK2101 Specs and Replacement

Type Designator: FTK2101

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.29 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 1.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: SOT323

FTK2101 substitution

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FTK2101 datasheet

 ..1. Size:162K  first silicon
 ftk2101.pdf pdf_icon

FTK2101

SEMICONDUCTOR FTK2101 TECHNICAL DATA 20V P-Channel Enhancement-Mode MOSFET FEATURE 3 Leading Trench Technology for Low RDS(on) Extending Battery Life 2 1 SOT 323 APPLICATIONS High Side Load Switch Charging Circuit 3 D Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc G 1 S 2 MARKING TS1 Maximum ratings (Ta=25 unless otherwise n... See More ⇒

 8.1. Size:144K  first silicon
 ftk2102.pdf pdf_icon

FTK2101

SEMICONDUCTOR FTK2102 TECHNICAL DATA 20V N-Channel Enhancement-Mode MOSFET FEATURE 3 Leading Trench Technology for Low RDS(on) Extending Battery Life 2 1 SOT 323 APPLICATIONS High Side Load Switch Charging Circuit 3 Single Cell Battery Applications such as Cell Phones, Digital Cameras ,PDAs, etc 1 2 MARKING TS2 Maximum ratings (Ta=25 unless otherwise noted) ... See More ⇒

Detailed specifications: FTK4N65P, FTK4N70D, FTK4N70F, FTK4N70I, FTK4N70P, FTK2005DFN23, FTK2012, FTK20N06D, STP65NF06, FTK2102, FTK2301, FTK2302, FTK2304, FTK2306, FTK2306A, FTK2310, FTK2312

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.