FTK2627 Datasheet and Replacement
Type Designator: FTK2627
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 5.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 510 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SOP8
FTK2627 substitution
FTK2627 Datasheet (PDF)
ftk2627.pdf
SEMICONDUCTORFTK2627TECHNICAL DATADDESCRIPTION The FTK2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). SSchematic diagram GENERAL FEATURES D D D D6 58 7VDS = -20V,ID = -5.4A RDS(ON)
Datasheet: FTK2306 , FTK2306A , FTK2310 , FTK2312 , FTK2324 , FTK2333 , FTK2341E , FTK25N03PDFN33 , MMIS60R580P , FTK2816E , FTK3004D , FTK3018 , FTK3022 , FTK3051 , FTK3134K , FTK3134KD , FTK3139K .
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
History: HSU0048 | IRF3711Z
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