FTK2627 Specs and Replacement

Type Designator: FTK2627

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 5.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 510 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm

Package: SOP8

FTK2627 substitution

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FTK2627 datasheet

 ..1. Size:351K  first silicon
 ftk2627.pdf pdf_icon

FTK2627

SEMICONDUCTOR FTK2627 TECHNICAL DATA D DESCRIPTION The FTK2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S Schematic diagram GENERAL FEATURES D D D D 6 5 8 7 VDS = -20V,ID = -5.4A RDS(ON) ... See More ⇒

Detailed specifications: FTK2306, FTK2306A, FTK2310, FTK2312, FTK2324, FTK2333, FTK2341E, FTK25N03PDFN33, MMIS60R580P, FTK2816E, FTK3004D, FTK3018, FTK3022, FTK3051, FTK3134K, FTK3134KD, FTK3139K

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