All MOSFET. FTK2627 Datasheet

 

FTK2627 Datasheet and Replacement


   Type Designator: FTK2627
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
   Package: SOP8
 

 FTK2627 substitution

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FTK2627 Datasheet (PDF)

 ..1. Size:351K  first silicon
 ftk2627.pdf pdf_icon

FTK2627

SEMICONDUCTORFTK2627TECHNICAL DATADDESCRIPTION The FTK2627 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has Gbeen optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). SSchematic diagram GENERAL FEATURES D D D D6 58 7VDS = -20V,ID = -5.4A RDS(ON)

Datasheet: FTK2306 , FTK2306A , FTK2310 , FTK2312 , FTK2324 , FTK2333 , FTK2341E , FTK25N03PDFN33 , 2N7002 , FTK2816E , FTK3004D , FTK3018 , FTK3022 , FTK3051 , FTK3134K , FTK3134KD , FTK3139K .

History: AP4575GM-HF | 2N3796 | APT6010LFLLG | CS6N70F | STN3414 | YJG90G10A | BUK9K18-40E

Keywords - FTK2627 MOSFET datasheet

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