FTK3615 MOSFET Datasheet: P-Ch, 30V, 10A. Full specification with pinout and replacement list

FTK3615 Specs and Replacement

   Type Designator: FTK3615
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 8.5 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: SOP8

FTK3615 substitution

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FTK3615 datasheet

..1. Size:211K first silicon
ftk3615.pdf pdf_icon

SEMICONDUCTOR FTK3615 TECHNICAL DATA D DESCRIPTION The FTK3615 uses advanced trench technology to provide excellent RDS(ON) G and low gate charge .This device is suitable for use as a load switch or in PWM applications. S Schematic diagram D D D D GENERAL FEATURES 5 8 6 7 VDS = - 30V,ID = -10A 3615 RDS(ON) ... See More ⇒

8.1. Size:345K first silicon
ftk3610.pdf pdf_icon

SEMICONDUCTOR FTK3610 TECHNICAL DATA D DESCRIPTION The FTF3610 uses advanced trench G technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in S PWM applications. Schematic diagram D D D D 6 5 GENERAL FEATURES 8 7 VDS = 30V,ID =11A 3610 RDS(ON) ... See More ⇒

9.1. Size:425K first silicon
ftk3620.pdf pdf_icon

SEMICONDUCTOR FTK3620 TECHNICAL DATA DESCRIPTION D 1 D 2 The FTK3620 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is G 1 G 2 suitable for use as a load switch or in PWM applications. S 1 S 2 Schematic diagram GENERAL FEATURES D 1 D 1 D 2 D 2 VDS = 30V,ID =7A 6 5 8 7 RDS(ON) ... See More ⇒

Detailed specifications: FTK3407L , FTK3415 , FTK3415L , FTK3439KD , FTK3443 , FTK35N03PDFN33 , FTK35N03PDFN56 , FTK3610 , IRFP260N , FTK3620 , FTK3N80I , FTK3N80D , FTK3N80P , FTK3N80F , FTK4004 , FTK4015D , FTK40N10D .