FTK4703 Specs and Replacement

Type Designator: FTK4703

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: DFN3X2-8L

FTK4703 substitution

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FTK4703 datasheet

 ..1. Size:191K  first silicon
 ftk4703.pdf pdf_icon

FTK4703

SEMICONDUCTOR FTK4703 TECHNICAL DATA DESCRIPTION The FTK4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -3.4A RDS(ON) ... See More ⇒

Detailed specifications: FTK4410, FTK4410D, FTK4414, FTK4435, FTK4438, FTK4459, FTK4503, FTK4604, AO3401, FTK4822, FTK4828, FTK4828D, FTK4828F, FTK4953, 2SJ463A, 2SK1723, 2SK2769-01MR

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