FTK4703 Datasheet and Replacement
Type Designator: FTK4703
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 3.4 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: DFN3X2-8L
FTK4703 substitution
FTK4703 Datasheet (PDF)
ftk4703.pdf
SEMICONDUCTOR FTK4703 TECHNICAL DATADESCRIPTION The FTK4703 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Schematic diagram GENERAL FEATURES MOSFET VDS = -20V,ID = -3.4A RDS(ON)
Datasheet: FTK4410 , FTK4410D , FTK4414 , FTK4435 , FTK4438 , FTK4459 , FTK4503 , FTK4604 , AO3401 , FTK4822 , FTK4828 , FTK4828D , FTK4828F , FTK4953 , 2SJ463A , 2SK1723 , 2SK2769-01MR .
History: STU80N4F6 | IXTP55N075T
Keywords - FTK4703 MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STU80N4F6 | IXTP55N075T
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