FTK4953 Datasheet and Replacement
Type Designator: FTK4953
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOP8
FTK4953 substitution
FTK4953 Datasheet (PDF)
ftk4953.pdf
SEMICONDUCTOR FTK4953 TECHNICAL DATAD1D2DESCRIPTIONThe FTK4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G1 G2been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S1 S2Schematic diagramGENERAL FEATURES D 1 D 1 D2 D 28 7 6 5VDS = -30V,ID = -4.9A RDS(ON)
Datasheet: FTK4459 , FTK4503 , FTK4604 , FTK4703 , FTK4822 , FTK4828 , FTK4828D , FTK4828F , SKD502T , 2SJ463A , 2SK1723 , 2SK2769-01MR , 2SK3113 , 2SK3687-01MR , 2SK3919 , 2SK4213 , IRF260B .
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