FTK4953 Specs and Replacement
Type Designator: FTK4953
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: SOP8
FTK4953 substitution
- MOSFET ⓘ Cross-Reference Search
FTK4953 datasheet
ftk4953.pdf
SEMICONDUCTOR FTK4953 TECHNICAL DATA D1 D2 DESCRIPTION The FTK4953 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It has G1 G2 been optimized for power management applications requiring a wide range of gave drive voltage ratings (4.5V 25V). S1 S2 Schematic diagram GENERAL FEATURES D 1 D 1 D2 D 2 8 7 6 5 VDS = -30V,ID = -4.9A RDS(ON) ... See More ⇒
Detailed specifications: FTK4459, FTK4503, FTK4604, FTK4703, FTK4822, FTK4828, FTK4828D, FTK4828F, SKD502T, 2SJ463A, 2SK1723, 2SK2769-01MR, 2SK3113, 2SK3687-01MR, 2SK3919, 2SK4213, IRF260B
Keywords - FTK4953 MOSFET specs
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