WNM07N60 MOSFET Datasheet: N-Ch, 600V, 7A. Full specification with pinout and replacement list

WNM07N60 Specs and Replacement

Type Designator: WNM07N60

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO220

WNM07N60 substitution

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WNM07N60 datasheet

0.1. Size:1752K willsemi
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WNM07N60/WNM07N60F WNM07N60/WNM07N60F 600V N-Channel MOSFET Description Features C The WNM07N60/WNM07N60F is N-Channel 600V@TJ=25 enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=1.0 advanced high voltage MOSFET Process and Low gate charge design to provide excellent RDS (ON) with low gate 100% avalanche tested charge. This device is suitable for use in p... See More ⇒

7.1. Size:1606K willsemi
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WNM07N65/WNM07N65F WNM07N65/WNM07N65F 650V N-Channel MOSFET Description Features C The WNM07N65/WNM07N65F is N-Channel 650V@TJ=25 enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=1.0 advanced high voltage MOSFET Process and Low gate charge design to provide excellent RDS (ON) with low gate 100% avalanche tested charge. This device is suitable for use in p... See More ⇒

Detailed specifications: SST113, SST404, SST405, SST406, WCM2001, WCM2002, WCM2007, WCM2068, IRFZ24N, WNM07N60F, WNM07N65, WNM07N65F, WNM12N65, WNM12N65F, WNM2016, WNM2020, WNM2021