WNM12N65 Specs and Replacement
Type Designator: WNM12N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO220
WNM12N65 substitution
- MOSFET ⓘ Cross-Reference Search
WNM12N65 datasheet
wnm12n65-f.pdf
WNM12N65/WNM12N65F WNM12N65/WNM12N65F 650V N-Channel MOSFET Description Features C The WNM12N65/WNM12N65F is N-Channel 650V@TJ=25 enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=0.57 advanced high voltage MOSFET Process and Low gate charge design to provide excellent RDS (ON) with low gate 100% avalanche tested charge. This device is suitable for use in p... See More ⇒
Detailed specifications: WCM2001, WCM2002, WCM2007, WCM2068, WNM07N60, WNM07N60F, WNM07N65, WNM07N65F, 75N75, WNM12N65F, WNM2016, WNM2020, WNM2021, WNM2024, WNM2030, WNM2046, WNM2046B
Keywords - WNM12N65 MOSFET specs
WNM12N65 cross reference
WNM12N65 equivalent finder
WNM12N65 pdf lookup
WNM12N65 substitution
WNM12N65 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IRFHM792
🌐 : EN ES РУ
LIST
Last Update
MOSFET: ASU70R600E | ASU65R850E | ASU65R550E | ASU65R350E | ASR65R120EFD | ASR65R046EFD | ASQ65R046EFD | ASM65R280E | ASM60R330E | ASE70R950E
Popular searches
mj15022 | toshiba c5198 | irf520n datasheet | tip107 | 2n5457 | k3568 | 2sc1344 | cs840f