WNM12N65 Datasheet and Replacement
Type Designator: WNM12N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 192 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 12 A
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
Package: TO220
WNM12N65 substitution
WNM12N65 Datasheet (PDF)
wnm12n65-f.pdf

WNM12N65/WNM12N65FWNM12N65/WNM12N65F650V N-Channel MOSFETDescription FeaturesCThe WNM12N65/WNM12N65F is N-Channel 650V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=0.57advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p
Datasheet: WCM2001 , WCM2002 , WCM2007 , WCM2068 , WNM07N60 , WNM07N60F , WNM07N65 , WNM07N65F , IRF520 , WNM12N65F , WNM2016 , WNM2020 , WNM2021 , WNM2024 , WNM2030 , WNM2046 , WNM2046B .
History: KI1N60DS
Keywords - WNM12N65 MOSFET datasheet
WNM12N65 cross reference
WNM12N65 equivalent finder
WNM12N65 lookup
WNM12N65 substitution
WNM12N65 replacement
History: KI1N60DS



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