All MOSFET. WNM12N65 Datasheet

 

WNM12N65 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WNM12N65
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 192 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO220

 WNM12N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WNM12N65 Datasheet (PDF)

 0.1. Size:1048K  willsemi
 wnm12n65-f.pdf

WNM12N65 WNM12N65

WNM12N65/WNM12N65FWNM12N65/WNM12N65F650V N-Channel MOSFETDescription FeaturesCThe WNM12N65/WNM12N65F is N-Channel 650V@TJ=25enhancement MOS Field Effect Transistor. Uses Typ.RDS(on)=0.57advanced high voltage MOSFET Process and Low gate chargedesign to provide excellent RDS (ON) with low gate 100% avalanche testedcharge. This device is suitable for use in p

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History: HRLW250N10K | FDB16AN08A0 | NTR4503N

 

 
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